Abstract
Abstract Cuprous oxide (Cu2O) crystals were grown on Si(111) substrates at a high temperature of approximately 960 °C using mist chemical vapor deposition (mist-CVD) by varying the mist carrier gas parameters. The mist-CVD process has a potentially low environmental impact and low cost due to the absence of a vacuum system and the use of low-toxic raw materials. The as-grown crystals were evaluated using X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. Based on these results, the mixture ratio of the mist carrier gas is significant for realizing Cu2O crystal growth. 

Published Version
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