Abstract
Er 0.04 Y 0.96 Al 3 (BO 3 ) 4 , Er 0.015 Yb 0.11 Y 0.875 Al 3 (BO 3 ) 4 and NdAl 3 (BO 3 ) 4 epitaxial layers were grown from K 2 Mo 3 O 10 -based fluxed melts by an LPE method. SGDS grown YAl 3 (BO 3 ) 4 and NdAl 3 (BO 3 ) 4 single crystals were used as substrates. Growth kinetics, homogeneity and micromorphology of Er:YAl 3 (BO 3 ) 4 , (Er,Yb):YAl 3 (BO 3 ) 4 and NdAl 3 (BO 3 ) 4 thin films were investigated. • Er 0.04 Y 0.96 Al 3 (BO 3 ) 4 , Er 0.015 Yb 0.11 Y 0.875 Al 3 (BO 3 ) 4 and NdAl 3 (BO 3 ) 4 epitaxial layers were grown from K 2 Mo 3 O 10 -based fluxed melts by an LPE method. • The growth kinetics of Er 0.04 Y 0.96 Al 3 (BO 3 ) 4 , Er 0.015 Yb 0.11 Y 0.875 Al 3 (BO 3 ) 4 and NdAl 3 (BO 3 ) 4 layers depending on the supercooling/supersaturation of high-temperature solutions was estimated. • At low supersaturation the surface morphology of (Er,Yb):YAB and Er:YAB epitaxial layers is good over large areas. All the surface irregularities are smaller than 50 µm. • The surface of NAB epitaxial layers is quite rough. Striations and “parasitic” crystals are observed on the surface of almost all grown layers.
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