High Temperature Embedded SiC Chip Module (ECM) for Power Electronics Applications

Abstract

Technology for a 3-D high temperature integrated power electronics module for applications involving high density, and high temperature (e.g., those over 200degC) is described. The high temperature embedded chip module (ECM) technology is proposed to realize a lower stress distribution in a mechanically balanced structure with double-sided metallization layers and material coefficient of thermal expansion match in the structure. This technology for packaging the active component is also proposed for universal use with a flip-over structure and pressure connections. The fabrication process of this high temperature ECM is presented. The forward and reverse characteristics of the high temperature ECM have been measured up to 279degC. Thermally induced mechanical stress is reduced to an acceptable level by applying a symmetrical structure with buffering layers