Abstract
AbstractHigh temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe:In and of CdSe:In are compared. There are differencies in In‐doping mechanisms of II–VI compounds. When HTEC isotherms and isobars of ZnSe:In and of CdSe:In, measured under metal component vapour pressure give both n‐type conductivity then differences appear in the results of measurements under the selenium vapor pressure (p). ZnSe:In isotherms in the last case are characterized by the conductivity type conversion but no such drastic change of HTEC type is observed on CdSe:In isotherms. Under the conditions of p, the activation energy of HTEC isobars for ZnSe:In is ΔE ≈ 1.3–1.6 eV and for CdSe:In is ΔE ≈ 1.2 eV. The onefold ionized substitutional In at Zn place is proposed to be compensated by native defects in ZnS:In and in CdSe:In under high p. This native defect may be onefold ionized zinc vacancy for ZnSe:In and twofold ionized cadmium vacancy for CdSe:In. Association of defects occur at lower temperatures. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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