Abstract
ZnS and CdSe x Te 1− x solid solutions were investigated by the method of high temperature electrical conductivity (HTEC) as a function of sample temperature and component vapour pressure in the phase transition region. On the temperature dependence of conductivity, a sharp jump of conductivity was observed in this region. On the temperature raising branch of the HTEC isobar the step-like change occurred at a higher temperature than on the temperature lowering branch. In the case of ZnS, the conductivity jump is dependent on p Zn in undoped and Cu-doped crystals and independent of p Zn in Al- and Ga-doped crystals. The X-ray diffraction investigations in CdSe x Te 1− x solid solutions show the simultaneous existence of cubic and hexagonal phases between the temperatures of step-like changes of HTEC.
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