Abstract
Extensive characterization results of MOSFET small-signal parameters over temperature (25/spl deg/ to 300/spl deg/C) are presented for low-V/sub T/ transistors fabricated in a SOS 0.5-/spl mu/m process. Low-V/sub T/ devices such as these are particularly useful for low-voltage, low-power (LVLP) analog applications. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (g/sub m//I/sub d/), output resistance (r/sub ds/), and threshold voltage (V/sub T/). These parameters are summarized as a function of both gate length (0.5 /spl mu/m to 16 /spl mu/m) and temperature. Inversion coefficient representation is employed for data presentation and analysis. This work provides the most thorough presentation of SOS MOSFET dc parameters as a function of both gate length and temperature to date. In addition, this work summarizes device information essential for successful high-temperature SOS-CMOS analog circuit design.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
