Abstract
In this paper, we present temperature-dependent current–voltage measurements of tunnel junctions lattice matched to InP at temperatures ranging from room temperature to 220 °C. Temperature-dependent tunneling properties were extracted by fitting the current–voltage characteristics using a simple analytical formula. Three different designs of tunnel junction were characterized, including a bulk InAlGaAs tunnel junction, an InAlGaAs tunnel junction with InAlAs cladding layers and an InGaAs/InAlGaAs quantum-well tunnel junction. Each device exhibited different temperature dependence in peak tunnel current and excess current, with the quantum-well tunnel junction exhibiting the greatest temperature sensitivity. We use a non-local tunneling model, in conjunction with a numerical drift-diffusion solver, to explain the performance improvement available by using double heterostructure cladding layers around the junction region, and use the same model to explain the observed temperature dependence of the devices. Copyright © 2014 John Wiley & Sons, Ltd.
Published Version
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