Abstract
In this study, we report tungsten oxide (WO3) doped vanadium target in order to sputter amorphous vanadium tungsten oxide (a-VWOx) thin films by reactive direct-current magnetron sputtering technique. No post annealing and post oxidation steps were applied to improve bolometric properties. Thin films with high temperature coefficient of resistance, up to 3.02%/K, were prepared with resistivity range of 1–10 Ω cm thereby controlling the oxygen flow rate and sputtering conditions. Thin film composition was determined using X-ray photoelectron spectroscopy analysis which showed that the film has a mixed phase of V2O5, VO2 and V2O3. The noise level of the deposited film at 20 Hz was calculated as 1.9 × 10−15 V2/Hz from the noise spectrum density analysis. This noise level was found out to be comparable to the literature for VOx films deposited by ion beam deposition technique.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
