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Abstract
GaN Bipolar Junction Transistors and GaN/AlGaN Heterojunction Bipolar Transistors were characterized at temperatures up to 250–300°C and power densities >10 kW cm −2. The breakdown voltage in both types of devices decreased at higher temperatures, with less degradation in the BJTs. At low current levels, the offset voltages were 2–3 V but increased at higher currents.
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