Abstract
Four-terminal structures are fabricated by focused-ion-beam (FIB) scanning on an AlGaAs/InGaAs/GaAs modulation doped structure. The large carrier density of this system results in small depletion spreading and a 260-nm-square four-terminal structure is successfully formed. The bend resistance of this structure indicates that ballistic coupling between two facing terminals remains up to room temperature. Thermal broadening of electron energy enhances the ballistic nature of the system at high temperature.
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