Abstract
Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with Al x In 1− x Sb barriers. Negative bend resistance is observed at temperatures between ∼1.5 and ∼200 K . The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica. E, Low-dimensional systems & nanostructures
Paper Title
Journal
Date
