Abstract
Measurements were made on a 0.2 μm four-terminal device, fabricated from an InSb/Al 0.15In 0.85Sb quantum well structure, at temperatures from 1.5 to 300 K . Negative bend resistance, a signature of ballistic transport, was observed at temperatures up to 205 K . The disappearance of the negative bend resistance at higher temperatures was accompanied by a non-linear dependence of the Hall voltage on magnetic field. The non-linearity indicates multiple-carrier conduction, which we characterize using quantitative mobility spectrum analysis.
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