Abstract
Atomic force microscopy, micro-Raman scattering and Auger spectroscopy were applied to study stress and material composition in Al0.34Ga0.66N grown by MOCHA on sapphire. Samples were annealed in N2, O2 and air ambient between 800 °C and 1200 °C. Annealing at temperatures above 800 °C led to composition changes, cracks and defect formation resulting in stress release. Additionally, a change of built-in stress from tensile to compressive was observed after air annealing. Auger spectroscopy analysis showed this switching of stress to be related to oxygen incorporation. Oxygen accumulates in areas of macroscopic cracks as well as microscopic defects. Oxygen diffusion in AlxGa1—xN was found to be largely enhanced in the presence of water vapor in oxygen ambient. Samples were thermally stable up to 1100 °C in nitrogen and oxygen. Annealing in air led to a large surface oxidation.
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