Abstract
Planar structure InGaAs/InP PIN photodiodes having low dark current and low junction capacitance characteristics were reproducibly fabricated by using VPE wafers. Bias/temperature life testings for the diodes showed that there were no significant degradations after 5500 h aging at 250°C and 10 V reverse bias by adopting the Ti/Pt and Ti/Au metals for the p-side contact.
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