Abstract
This paper reports a front-illuminated planar InGaAs PIN photodiode with very low dark current, very low capacitance and very high responsivity on S-doped InP substrate. The presented device which has a thick absorption layer of 2.92 μm and a photosensitive area 73 μm in diameter exhibited the high performance of a very low capacitance of 0.47 pF, a very low dark current of 0.041 nA, a very high responsivity of 0.99 A/W (79% quantum efficiency) at λ = 1.55 μm, the 3 dB bandwidths of 6.89 GHz (−5 V), 7.48 GHz (−12 V) for bare chips and 4.48 GHz (−5 V), 5.02 GHz (−12 V) for the devices packaged in TO can, respectively. Furthermore, the developed PIN photodiodes possess high breakdown voltage of less than −25 V.
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