Abstract
Oxidized iridium (IrOx) Schottky contacts (SCs) with excellent high temperature stability were fabricated on 2¯01 β-Ga2O3 single crystal substrates. These IrOx:β-Ga2O3 SCs were operated at temperatures from 24 to 350 °C with only a very small increase in reverse leakage current, while maintaining extremely high rectification ratios (at ±3 V) of more than 10 orders of magnitude at all temperatures, including 350 °C. This remarkable high temperature performance was due to their very high and thermally stable rectifying barriers that, after an initial heat-related improvement, were characterized by zero-bias effective barrier heights of 2.05 ± 0.02 eV and ideality factors of 1.05–1.10, which were almost unchanged by further repeated operation at 350 °C. The reverse leakage current density at 350 °C was only ∼2.3 × 10−9 A cm−2 (∼3.0 pA) at −3 V and ∼7.5 × 10−8 A cm−2 (∼100 pA) at −100 V. These IrOx:β-Ga2O3 SCs represent a significant improvement in high-temperature β-Ga2O3 SC performance, with considerable potential for the fabrication of high temperature β-Ga2O3 rectifying diodes, deep UV photodetectors, and metal-semiconductor field effect transistors.
Published Version
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