Abstract
High-quality superconductor/normal-metal/superconductor (SNS) edge-geometry weak links have been produced on silicon-on-sapphire (SOS) substrates using a new SrTiO 3/“seed-layer”/cubic-zirconia (YSZ) buffer system. The seed layer is a thin YBa 2Cu 3O 7- x (YBCO) or PrBa 2Cu 3O 7- x (PBCO) film, which provides a template for growth of the SrTiO 3. This multilayer buffer system eliminates problems with series grain-boundary weak links seen in edge junctions on single YSZ buffer layers on SOS, while the use of moderate-dielectric-constant SOS substrates should benefit high-frequency applications and enable integration with silicon circuitry. SNS weak links fabricated on SOS with PBCO and Co doped YBCO normal-metal layers exhibit current-voltage characteristics qualitatively consistent with the resistively shunted junction model, with modulating AC Josephson steps and operation to temperatures above 77 K. These are the first reported epitaxial edge-geometry SNS devices on SOS substrates.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call