High suppression of the short-channel effect in ultrathin SOI n-MOSFETs

E Suzuki,H Hiroshima,S Kanemaru,K Ishii,T Maeda,T Sekigawa,K Nagai,T Tsutsumi

doi:10.1109/drc.1999.806314

High suppression of the short-channel effect in ultrathin SOI n-MOSFETs

E Suzuki, H Hiroshima + Show 6 more

https://doi.org/10.1109/drc.1999.806314

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Publication Date: Jun 23, 1999

#Gate Length Regime #Subthreshold Slope Characteristics + Show 8 more

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Abstract

High suppression of threshold voltage roll-off and subthreshold slope characteristics have been experimentally shown in ultrathin SOI n-MOSFETs in the 40-135 nm gate length regime, and the effectiveness of an ultrathin SOI layer to prevent the short channel effect was experimentally confirmed.

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