Abstract
As the MOSFET technology is extended into the 0.1 /spl mu/m gate length regime and the supply voltage is scaled to 1-2V, reduction of the threshold voltage (VT) should be pursued more aggressively to obtain sufficient drain current. With scaling down the threshold voltage, it is important to reduce SCE (short channel effect), i.e. DIBL and V/sub T/ roll-off. In this paper, we present an implementation and the device characteristics of O.l/spl mu/m IHLATI (indium halo by large angle tilt implant) nMOSFETs which have excellent resistance to the SCE while maintaining the V/sub T/ very low. We compare the IHLATI nMOSFETs with conventional boron channel nMOSFETs and indium SSR structure nMOSFETs.
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