High Substrate-Temperature (450–600°C) Fabrication of CuIn(S,Se)2 Thin Films Using Hybrid Reactive Sputtering/Sulfurization Method

Abstract

CuInSe2, CuInS2, CuGaSe2, CuGaS2 and their multinary alloys are promising for applications in photovoltaic devices. The fabrication of I-III-IV2 thin films beyond the conventional multi-source deposition have become extremely demanding for the large scale solar modules development. Reactive sputtering and sulfurization are among the best choices that have many intrinsic advantages for very large-areas. In this work, the depositions of CuIn(S,Se)2 thin films were carried out by hybrid sputtering/sulfurization method with Culn and CuInSe2 targets and the reactive gas, H2S. The characterization results show that a nearly stoichiometric CuInSe2 thin film could be obtained with or without a post H2S annealing. The Se/S ratio of CuIn(S,Se)2 thin films could be controlled with the different growth conditions. It shows that this hybrid method could be a feasible method to fabricate the large-area I-III-VI2 based high efficiency solar cells.