Abstract
The ternary compound semiconductor CuInS 2 has attracted much attention owing to its potential applications in photovoltaic devices. We deposit CuInS 2 films on float glass substrates by a reactive radio frequency sputter process using a Cu–In inlay target and H 2S gas in one step. The morphology of the films was studied by Atomic Force Microscopy, X-ray Diffraction was used to check the crystal structure of the films. The composition of the layers was determined by Rutherford Back-scattering Spectroscopy and Energy-Dispersive X-ray Analysis. The electrical properties of the layers, i.e. the carrier concentration, Hall mobility, and specific resistivity and their dependencies on temperature were investigated by Hall effect measurements.
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