High Strength and Low Thermal Resistance of Die-Bonding Structure for High-Power Light-Emitting Diodes

Abstract

Die-bonding materials are essential packaging materials for high-power light-emitting diodes (LEDs), which affects their heat dissipation and reliability. In this work, a die-bonding structure with high strength and low thermal resistance was proposed for high-power LEDs. A Cu-foam/Sn composite preform was prepared as the die-bonding material in this die-bonding structure. The composite preform is composed of high-melting-point Cu skeleton and low-melting-point Sn. The Cu-skeleton structure accelerates the bonding process and forms intermetallic compounds (IMCs) with high remelting point. Consequently, the die-bonding structure displays robust joints from the transient-liquid-phase (TLP) interconnection layer and high thermal conductivity from the Cu skeleton. The effects of bonding temperature on the mechanical and thermal properties of LEDs were investigated. After bonded with the Cu-foam/Sn composite preform, the LED achieves a low thermal resistance of 6.75 K/W, a low junction temperature change of 6.5 °C, and a high shear strength of 37.8 MPa. Moreover, the proposed die-bonding structure has a lower thermal resistance and higher light output power, which are 27.2% lower and 7.2% higher than the traditional die-bonding structure, respectively.