Abstract
On‐chip integration of two‐dimensional (2D) materials holds immense potential for novel optoelectronic devices across diverse photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to its ultra‐high carrier mobility and outstanding photoresponsivity. Herein, a high‐speed photodetector based on a multilayer 90 nm thick InSe integrated on a silicon nitride (SiN) waveguide is reported. The device exhibits a remarkable low dark current density of ≈40 nA μm−2, a photoresponsivity of 0.38 A W−1, and an external quantum efficiency of ≈48.4%. Tested under ambient conditions at near‐infrared 976 nm wavelength, it exhibits an absorption coefficient of 0.11 dB μm−1. Additionally, the photodetector demonstrates a 3‐dB radiofrequency bandwidth of 85 MHz and an open‐eye diagram at data transmission of 1 Gbit s−1. Based on these exceptional optoelectronic advantages, integrated multilayer InSe enables the realization of active photonic devices for a range of applications, such as short‐reach optical interconnects, LiDAR imaging, and biosensing.
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