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Abstract
Graphene photodetectors can have broadband operation and a large bandwidth, but they usually suffer from a large dark current when biased. To solve this problem, we demonstrate van der Waals heterostructure tunneling photodiodes integrated on silicon nitride waveguides. The heterostructure is made up of layers of molybdenum disulfide, graphene, boron nitride, and graphene from bottom to top. The bottom graphene is n-doped by molybdenum disulfide while the top graphene layer remains p-doped. Between the two graphene layers, multilayer boron nitride was employed as a tunneling barrier. At ∼1550 nm, high on/off current ratios larger than 104 were measured in the dark. A responsivity of ∼0.24 A/W and a bandwidth of 28 GHz (56 GHz by deconvolving response of experimental system) were also obtained.
Published Version
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