An optical modulator with ridge-type silicon waveguide based on graphene and MoS2 layers and improved modulation depth

Abstract

Listen

Translate article

In this paper, an optical modulator based on the hybrid structure is designed and analyzed in the wavelength range of 1.3 µm–1.8 µm. In this work, the proposed modulator consists of graphene, Molybdenum disulfide ( $${\mathrm{MoS}}_{2}$$ ), and Hexagonal Boron Nitride (h-BN) layers with Si layer on $${\mathrm{SiO}}_{2}$$ substrate. The Si layer on $${\mathrm{SiO}}_{2}$$ substrate has created a waveguide in the middle of the structure. Our investigations show that the strong coupling in this intermediate waveguide increases the light interaction with graphene, and finally increases the modulation depth (MD) of proposed modulator. In our proposed modulator, at telecommunication wavelength of 1.55 µm, the modulation depth equals 0.2 dB/µm, and the loss rate is 0.2 dB/µm. The highest modulation depth is 0.58 dB/µm, with loss of 0.58 dB/µm and occurs at wavelength of 1.8 µm.