Abstract

Various achievements of high-speed technologies have contributed towards advancements in high-density DRAMs (dynamic random access memories). We consider both fast access time and short cycle time which are important for high speed data rate operation. Transistor switching speed improvement due to device scaling has been one of the key factors for high-speed DRAMs. Advanced sense amplifier technologies have also played important roles in high-speed DRAM development. The 16M-bit dynamic RAM will also be discussed.

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