On the retention time distribution of dynamic random access memory (DRAM)

Abstract

The retention time distribution of high-density dynamic random access memory (DRAM) has been investigated. The key issue for controlling the retention time distribution has been clarified and its model has been proposed for the first time. Trench capacitor cell with 0.6-/spl mu/m ground rule was evaluated. It was found that the retention time distribution consists of "tail distribution" and "main distribution." "tail distribution," by which DRAM refresh characteristics are restricted, depends on the boron concentration of the memory cell region. As boron concentration of the memory cell region increases, "tail distribution" is enhanced. This enhancement is due to the increase of the junction leakage current from the storage node. For the purpose of accounting for the nature of "Tail Distribution," the concept of thermionic field emission (TFE) current has been introduced. The high electric field at pn junction of the storage node enhances thermionic field emission from a deep level. The activation energy of the deep level is normally distributed among the memory cells, which leads to the normal distribution of log(retention time). Two methods for reducing "tail distribution" are proposed. One is to reduce the electric field of the depletion layer of the storage node. The other is to reduce the concentration of the deep level for TFE current.