Abstract
High speed selfaligned Ga0.5In0.5P/GaAs hole barrier bipolar transistors (HBBTs) with a 60 nm carbon doped base layer (p = 6.5 × 1019 cm−3) and a 20 nm undoped GaInP barrier have been fabricated. The devices show maximum small signal current gains around 30, independent of emitter size. A current gain cutoff frequency of fT = 95 GHz and power gain cutoff frequency of fmax = 110 GHz are reported for 1.5 × 10 μm2 and 2 × 1.5 × 10 μm2 devices, respectively. These results represent the best microwave performance yet reported for Ga0.5In0.5P/GaAs based HBTs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
