Abstract
Organic field-effect transistors (OFETs) with a novel structure, step-edge vertical-channel OFETs (SVC-OFETs), have been developed to obtain a short channel by a self-aligned process. SVC-OFETs enable the fabrication of a submicron channel by forming the channel region around the step-edge structure. Carriers flow in the vertical direction in the short channel of the step-edge structure. SVC-OFETs show excellent device performance characteristics with a high current and a high cutoff frequency of approximately 1.5 MHz, which is a very high value for organic transistors.
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