High-speed, low-power, implanted-buried-oxide CMOS circuits

Abstract

CMOS ring oscillators with channels less than 1/2 µm long were fabricated in implanted-buried-oxide, silicon-on-insulator films using direct-write electron-beam lithography. Transistors with polysilicon gate lengths as short as 0.4 µm and effective channel lengths as short as 0.21 µm operate satisfactorily. Ring oscillators have delays per gate of 52 and 83 ps and power-delay products of 55 and 5 femtojoules for supply voltages of 5 and 3.3 V, respectively.