Abstract
Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 μm2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s−1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.
Highlights
Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal
III–V material is grown from the Si seed into the hollow SiO2 template
Starting at the Si seed, InGaAs is grown into the hollow oxide template using metalorganic chemical vapor deposition (MOCVD) at 550 °C
Summary
Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s−1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links. To present a viable alternative to copper interconnects, optical links need to provide significantly better energy efficiency, while supporting higher bandwidth densities and lower cost per bit. This requires physically scaled components with ultra-low capacitance that are densely integrated with their control electronics by leveraging monolithic integration technologies[4]. When operated as an LED, the fabricated p–i–n devices show light emission in the Cband, paving the way for a fully integrated optical link
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