Abstract

High-speed epitaxial growth of M-type strontium hexaferrite (SrFe12O19; SrM) films was demonstrated on a c-cut sapphire substrate using metal–organic chemical vapor deposition. c-axis-oriented SrM films were obtained at a deposition temperature of 1273 K and a total chamber pressure of 1.5 kPa. The epitaxial SrM films had in-plane orientation relationships of SrM [11-00] || α-Al2O3 [101-0]. The epitaxial SrM film exhibited both high deposition rate of 14 μm h−1 and high saturation magnetization value at 80 K of 380 emu cm−3.

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