Growth and evaluation of epitaxial BaTiO3 thin films of less than 100 nm thickness by metal–organic chemical vapor deposition

Abstract

Epitaxial BaTiO3 (BTO) thin films of less than 100 nm thickness were grown on Pt(001)/MgO(001) substrates at growth temperatures of 500–700 °C with a low deposition rate of about 25 nm/h by metal–organic chemical vapor deposition (MOCVD). The BaTiO3 thin films were epitaxialy grown with (001) orientation. These films show quadrangular grains and a dense cross-sectional structure. The relative permittivities of these films grown at 500, 600, and 700 °C with thicknesses of 62, 65, and 82 nm were 338, 455, and 566 at 1 kHz, respectively. These relative permittivities were higher than those of BTO films prepared by other methods and BTO ceramics with thicknesses less than 100 nm.