Abstract
The properties of enhancement-mode InP metal-insulator-semiconductor field-effect transistors fabricated on semi-insulating InP substrates are reported. The epitaxial layers of the device structure have been grown by chloride vapor-phase epitaxy. Short-circuit current gain cutoff frequencies of 29.6 GHz were measured for 1- mu m-gate-length devices. For devices with submicrometer gate lengths, extrinsic transconductance values up to 300 mS/mm and short-circuit current-gain cutoff frequencies of 38.1 GHz were measured. SiO/sub 2/ deposited by electron beam evaporation and plasma-enhanced CVD Si/sub 3/N/sub 4/ have been utilized as gate insulators, and a drain current drift of 30% within the first 50 h of operation has been observed. The high-speed performance of these devices represent to the authors' knowledge the fastest InP-based MIS field-effect transistor demonstrated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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