High-speed enhancement mode InP metal-insulator-semiconductor field-effect transistors exhibiting very high transconductance

Abstract

We report the fabrication and performance of enhancement mode InP metal-insulator-semiconductor field-effect transistors having transconductances as high as 200 mS/mm for a gate length of 1 μm. The epitaxial layers of the structure have been grown by chloride vapor phase epitaxy. Electron beam evaporated SiO2 has been utilized as gate insulator. The metal-insulator-semiconductor field-effect transistors have low gate to source leakage currents (<125 nA) and saturation drift velocities as high as 3×107 cm/s. The transconductance value achieved in the present work is the highest ever measured on InP field-effect transistors.