Abstract
AbstractThis paper demonstrates the divide‐by‐4/5 prescalers with merged AND gates in 2‐μm GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35‐μm SiGe HBT technologies. By biasing the HBT near the peak transit‐time frequency (fT), the maximum operating frequency of a D‐type flip‐flop can be promoted. At the supply voltage of 5 V, the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher‐speed performance of 1–8 GHz at the cost of power consumption. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1498–1500, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23407
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