Abstract
This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.
Highlights
Silicon-on-insulator based photonics is a rapidly emerging material platform in which generation datacom functionality can be realized in an optical format at low cost
We have presented experimental data from a PN junction based silicon Mach Zehnder modulator
Modulation efficiencies in the range 1.4 to 1.9 V/cm have been measured for reverse bias voltages between 0 V and 6 V
Summary
Silicon-on-insulator based photonics is a rapidly emerging material platform in which generation datacom functionality can be realized in an optical format at low cost. The much increased transmission distances possible with high speed photonics links can enable disaggregation in data centers to allow architectures with different functionality [1]. Silicon photonics can take advantage of large scale manufacturing facilities developed for the CMOS industry to produce high performance photonic transceivers with high yield and low cost. This allows elimination of the cost barriers which have previously restricted the transition from electrical to optical links to longer haul applications. A key component in the silicon based photonic transceiver is the optical modulator. High modulation efficiency is critical to allow a reduction in the drive voltage required
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