Abstract
Bipolar resistive switching performance has been demonstrated in the sandwiched Pt/Ta2O5/TiN structures, including uniform set and reset voltages distributions, good endurance, long retention, and high operation speed. In addition, multi-level storage capability has been achieved through controlling different reset stop voltages and different compliance currents in direct current voltage sweeping modes and by means of different pulse erasing voltages in pulse programming/erasing modes. High speed electrical pulse induced multi-level storage capability shows good endurance and long retention of the four level resistance states. On the basis of the conducting filament model, the multi-level switching capability has been explained. This study suggests that the Pt/Ta2O5/TiN devices have potential application in nonvolatile high speed and multi-level resistive switching memory.
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