Abstract
Depletion-mode GaInAsP/InP junction field-effect transistors have been fabricated on Fe-doped semi-insulating InP substrates using liquid-phase epitaxial growth techniques. We achieved transconductance of 24 mS (l60mS/mm), drainsource saturation current at an on gate bias of 486mA/mm and current cutoff frequency of 18.8 GHz using a GaInAsP channel layer owing to the gate length reduction.
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