Abstract
Stress in single and periodic shallow-trench-isolated Si structures was examined by 364nm excitation confocal resonance Raman microscopy, laser penetration being restricted to the near-surface region. Using a 1.3 numerical aperture microobjective lens with a theoretical ∼140nm spatial resolution, the authors show that the configuration with both incident and scattered lights polarized parallel to each other and perpendicular to Si stripes is favorable for stress detection in the middle of the stripes, suppressing contributions from their edges. The stresses located in different areas of the structures were identified and analyzed.
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