Abstract
AbstractSilicon K x‐ray emission spectra of a model electronic device are measured using a commercial electron probe microanalyser equipped with a wavelength‐dispersive spectrometer. Extended x‐ray emission fine structure (EXEFS) is observed at the low‐energy side of the K x‐ray emission diagram lines. The EXEFS spectra are known to be similar to the XANES (x‐ray absorption near‐edge structure) spectra. The measured silicon K x‐ray EXEFS spectra are compared with Si, SiC, Si3N4 and SiO2 EXEFS spectra. The EXEFS spectra at two places on the electronic devices are different from each other; one is similar to the spectrum of SiO2 and the other is the sum of SiO2 and Si. These results correspond well to the multilayer structure of the measured points. The present results demonstrate that a high spatial resolution chemical‐state analysis is possible using the XANES‐like EXEFS spectra. Copyright © 2001 John Wiley & Sons, Ltd.
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