Abstract
The near edge fine structure of the silicon L 2,3 edge from Si, SiO 2 and SiSiO 2 interfaces and the extended energy loss fine structure of the oxygen K-edge from SiO 2 and SiSiO 2 are studied by means of parallel detection EELS with high spatial resolution scanning transmission electron microscopy. The “fingerprint” technique using the specific characteristics of the Si L 2,3 edges in Si, SiO 2 and SiSiO 2 interfaces is used to distinguish between spectra obtained from different areas. The EXELFS analysis of the oxygen K-edge implies that the OSi bond length is slightly larger in the SiSiO 2 interface than in SiO 2. The comparison of the EXELFS amplitudes provides a means to observe the differences in coordination numbers and disorder parameters. The results are discussed and compared with data obtained using other techniques.
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