Abstract
We propose a novel n-channel LDMOSFET (lateral double-diffused metal oxide semiconductor field effect transistor) structure with a breakdown voltage over 100 V, which was fabricated under the thermal budget of the conventional 0.35-μm industry process. We optimized the engineering parameters, such as the distance of the gap between the DEEP N-WELL and the source region, as well as the doping concentration of the NADJUST-layer, for achieving both the high breakdown voltage and the low specific on-resistance. The fabricated device exhibits a breakdown voltage (BVdss) over 110 V and a specific on-resistance as low as 2.20 mΩ·cm. The robust breakdown characteristics are due to the migration of the location wherein maximum impact ionization occurs from the gate region to the drain side. The numerical simulation revealed that the maximum impact ionization rate of the proposed structure was 2.44 × 10 cm−3s−1 while that of the conventional structure was 6.69 × 10 cm−3s−1.
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