Abstract
We have designed and fabricated quantum dot (QD) infrared photodetectors which utilize photoionization of self-assembled InAs QDs and lateral transport of photoexcited carriers in the modulation-doped AlGaAs/GaAs two-dimensional channels (modulation-doped quantum-dot infrared photodetectors; MD-QDIPs). A broad photocurrent signal has been observed in the mid-infrared range. A very large photoconductive gain of the order of 105-6 is achieved by long lifetimes as well as high mobilities of photoexcited carriers in the modulation-doped conduction channels.
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