Abstract
A study of selective epitaxy by conventional low‐pressure organometallic vapor phase epitaxy (LPOMVPE) was performed using a variety of masking materials. Very low or zero nucleation of polycrystalline (poly) ,, and was observed on the 300°C chemical vapor deposition (CVD) , sputtered , and plasma enhanced CVD (PECVD) masking materials over a wide range of typical growth parameters. Dense polycrystalline nucleation was observed on masks. The degree of selectivity achieved vs. mask material and composition at relatively low LPOMVPE reaction temperatures was examined. It was repeatedly observed that during selective epitaxy, zero polycrystalline and nucleation occurred on the dielectric masks using conventional LPOMVPE. High selectivity in mask areas as large as was achieved without specifically using a chloride precurser, or extremely low pressure, or masks.
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