High Responsivity Photodetector at Room Temperature Based on Pure-Phase 2-D InAs Nanosheets

Abstract

Low-dimensional narrow-band-gap III-V semiconductors are the key component of next generation high-performance nanoelectronics, nanophotonics and quantum devices. However, high-performance nanoscale wide-spectrum photodetectors covering IR range are still rare. Here, we report a new kind of photodetector based on 2-D InAs nanosheets. Figure (a) shows that the morphology of the 2-D InAs nanosheet was characterized by transmission electron microscopy. The photodetector has a very high optoelectronic response in the infrared band at room temperature. As shown in Figure (b), the devices can respond to light with wavelength ranging from 650 to 1100 nm of IR with high responsivity. The high performance of photodetectors is mainly reflected in the ultra-high responsivity (~1231A/W), ultra-high EQE (2.2 x 105 %) under 700nm wavelength laser illumination, and very low operating voltage. These results show that the 2-D InAs nanosheets devices have broad application prospects in nanoelectronic devices, optoelectronic devices and integrated optoelectronic devices. Figure 1