Abstract
We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on–off current ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of −5 V under 290 nm illumination.
Highlights
In recent years, ultraviolet photodetectors have attracted much attention for their potential in medical, commercial, and military applications [1,2,3,4,5]
We investigated the properties of MgZnO thin-film transistor (TFT) that are fabricated by radio frequency-sputtering with different oxygen flow ratios, and generalized the optimized conditions
The best characteristics of the MgZnO TFT with a SiO2 dielectric were obtained with a sputtering
Summary
Ultraviolet photodetectors have attracted much attention for their potential in medical, commercial, and military applications [1,2,3,4,5]. The thin-film transistor (TFT) has been intensively researched for its application to switching devices in large-area display panels (active matrix liquid crystal displays (AMLCDs) and organic light-emitting diodes). A number of different materials are utilized for TFT fabrication. Many groups have used ZnO-based semiconductors as the TFT channel layer, owing to their high field mobility, low temperature processing, and nontoxicity. Oxide TFTs with photosensitive metal oxide semiconductor materials are promising candidates that can act as photodetectors. Bae et al reported the fabrication of a ZnO-based phototransistor [6]
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