Abstract
In this study, we investigate the electrical and optoelectronic property of the amorphous indium zinc oxide (a-IZO) thin-film phototransistor. We realize an ultraviolet (UV) photodetector by using a wide-bandgap a-IZO thin film as the channel layer material of the TFT. The fabricated device has a threshold voltage of −1.5 V, on-off current ratio of 104, subthreshold swing of 0.4 V/decade, and mobility of 12 cm2/Vs under dark environment. As a UV photodetector, the responsivity of the device is 5.87 A/W and the rejection ratio is 5.68 × 105 at a gate bias of −5 V under 300 nm illumination.
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