Abstract
An optically controlled field-effect transistor (FET) in which the GaAs FET region and the GaInAs/InP light absorption region were directly bonded is demonstrated. This device offers high optical- to-electrical conversion efficiency. In this work, we report the electrical and optical characteristics of this device based on the direct wafer bonding technique. The bonding temperature dependence on the device characteristics and responsivity characteristics were also measured. As a result, we achieved a high responsivity of more than 150 A/W.
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