Abstract
• SnS 2 /Ag 2 S heterojunctions were designed on hexagonal boron nitride films. • The responsivity of SnS 2 /Ag 2 S heterojunctions higher than Ag 2 S or SnS 2 devices. • The responsivity of SnS 2 /Ag 2 S heterojunctions under 405 nm is 4.52 A/W. Photodetectors made of single Selenium sulfide (SnS 2 ) or Silver sulfide (Ag 2 S) are difficult to achieve superiority in performance. Therefore, it is a good idea to prepare SnS 2 /Ag 2 S heterojunctions on hexagonal boron nitride (hBN). The responsivity ( R ) of SnS 2 /Ag 2 S photodetector under 405 nm laser is 4.52 A/W, the specific detectivity ( D* ) is 3.53×10 11 Jones and the response speed reaches 37/50 ms. Ag 2 S quantum dots (QDs) overcome the problem of easy recombination of photogenerated carriers in SnS 2 . This makes the R of SnS 2 /Ag 2 S photodetectors about three orders of magnitude higher than that of Ag 2 S or SnS 2 devices.
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